Microsemi Corp. Bipolar Transistors - BJT 2N3838/TR

The 2N3838 is a complementary NPN/PNP silicon small-signal transistor in a 6-pin hermetic ceramic flatpack package with an Au over Ni plated kovar cover and terminals. It is military qualified to JANTXV level per MIL-PRF-19500/421, with a maximum collector-emitter voltage of 40 V, collector-base voltage of 60 V, and collector current of 600 mA. The junction and storage temperature range is -65 to +200 °C. Thermal resistance is 250 °C/W junction-to-case and 350 °C/W junction-to-ambient for one transistor. Power dissipation is 0.25 W at +25 °C ambient and 0.7 W at +25 °C case temperature. Switching times include a turn-on time of 45 ns and turn-off time of 300 ns under saturated conditions.