Microsemi Corp. Bipolar Transistors - BJT 2N3810U

The 2N3810U is a PNP silicon dual transistor in a TO-78 package, designed for general-purpose amplification and switching applications. It has a collector-emitter voltage rating of 60 Vdc, a collector current limit of 50 mAdc, and a total power dissipation of 350 mW at +25°C when both sections are active. The transistor offers a forward-current transfer ratio (hFE) ranging from 150 to 450 at 1.0 mA collector current and 5.0 V collector-emitter voltage. Its collector-emitter saturation voltage is 0.25 V at 1.0 mA collector current and 100 μA base current. The operating and storage junction temperature range is -65°C to +200°C. The device is qualified to MIL-PRF-19500/336.