The 2N3810U/TR is a PNP silicon dual transistor in a TO-78 package, designed for general-purpose amplification and switching applications. It has a collector-emitter voltage rating of 60 Vdc, a collector current limit of 50 mAdc, and a total power dissipation of 350 mW when both sections are active at +25°C. The device operates over a junction temperature range of -65°C to +200°C. Forward current transfer ratio (hFE) ranges from 150 to 450 at collector currents of 100μA to 1.0mA and VCE = 5.0Vdc. Collector-emitter saturation voltage is 0.25V at IC = 1.0mA and IB = 100μA. It meets MIL-PRF-19500/336 qualification standards.
Bipolar Transistors - BJT BJTs
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 2N3810U/TR |
| Product Name | Bipolar Transistors - BJT |
