Microsemi Corp. Bipolar Transistors - BJT 2N3810L/TR

The 2N3810L/TR is a PNP silicon dual transistor in a TO-78 package, qualified per MIL-PRF-19500/336. It has a collector-emitter voltage rating of 60 Vdc, a collector current limit of 50 mAdc, and a total power dissipation of 350 mW at +25°C for both sections. The forward-current transfer ratio ranges from 100 to 450 depending on collector current, with a collector-emitter saturation voltage of 0.2 V at 100 μA collector and 10 μA base current. The base-emitter saturation voltage is 0.7 V under the same conditions. The device operates from -65°C to +200°C. Small-signal characteristics include a short-circuit current gain of 150 to 600 at 1.0 mA and 10 V, and an input impedance of 3.0 to 30 kΩ. Output capacitance is 5.0 pF, and input capacitance is 8.0 pF. Noise figure is 2.5 dB at 10 kHz with a 3.0 kΩ source resistance.