Microsemi Corp. Bipolar Transistors - BJT 2N3765

The 2N3765 is a PNP switching silicon transistor in a TO-39 package for high-reliability applications, qualified per MIL-PRF-19500/396 to JAN and JANTXV levels. It has a collector-emitter voltage rating of 60 Vdc, a collector-base voltage of 60 Vdc, and an emitter-base voltage of 5.0 Vdc. The collector current is rated at 1.5 Adc, with a total power dissipation of 0.5 W at +25°C, derating at 2.86 mW/°C above that temperature. Thermal resistance from junction to case is 88°C/W. The device features a minimum forward current transfer ratio of 20 at 1.5 Adc and a collector-emitter saturation voltage of up to 1.0 Vdc under specified conditions. Operating and storage junction temperature ranges from -55°C to +200°C.