Microsemi Corp. Bipolar Transistors - BJT 2N3763L

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Bipolar Transistors - BJT Power BJT
Description
Bipolar Transistors - BJT Power BJT
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The 2N3763L is a PNP silicon switching transistor in a TO-39 package, rated for a collector-emitter voltage of 60 Vdc, collector-base voltage of 60 Vdc, and emitter-base voltage of 5.0 Vdc. It supports a continuous collector current of 1.5 Adc and has a total power dissipation of 0.5 W at +25°C, derating at 2.86 mW/°C above that temperature. The thermal resistance junction-to-case is 88 °C/W. Operating and storage junction temperatures range from -55°C to +200°C. It meets MIL-PRF-19500/396 qualifications and is listed under the JAN, JANTX, and JANTXV military-grade series. Electrical characteristics for the "L" suffix variant are identical to the corresponding non-"L" devices.

Datasheet Summary
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The 2N3763L is a PNP silicon switching transistor in a TO-39 package, rated for a collector-emitter voltage of 60 Vdc, collector-base voltage of 60 Vdc, and emitter-base voltage of 5.0 Vdc. It supports a continuous collector current of 1.5 Adc and has a total power dissipation of 0.5 W at +25°C, derating at 2.86 mW/°C above that temperature. The thermal resistance junction-to-case is 88 °C/W. Operating and storage junction temperatures range from -55°C to +200°C. It meets MIL-PRF-19500/396 qualifications and is listed under the JAN, JANTX, and JANTXV military-grade series. Electrical characteristics for the "L" suffix variant are identical to the corresponding non-"L" devices.

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Bipolar Transistors - BJT
2N3763L
Bipolar Transistors - BJT 2N3763L
Bipolar Transistors - BJT Power BJT

Bipolar Transistors - BJT Power BJT

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number 2N3763L
Product Name Bipolar Transistors - BJT
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