Microsemi Corp. Bipolar Transistors - BJT 2N3763

PNP switching silicon transistor for power applications, housed in a TO-39 package, with a collector-emitter voltage rating of 60 Vdc, collector current of 1.5 Adc, and total power dissipation of 0.5 W at 25°C. Qualified to MIL-PRF-19500/396 at JANTX level. Thermal resistance junction-to-case is 88°C/W. Operating and storage junction temperature range is -55°C to +200°C. Forward current transfer ratio ranges from 20 to 80 at 1.0 A collector current and 1.5 V collector-emitter voltage. Collector-emitter saturation voltage is 0.9 Vdc at 1.0 A collector current and 100 mA base current. Base-emitter saturation voltage is 0.9 to 1.4 Vdc under the same conditions. Switching delay time is 8.0 µs, rise time 35 µs, storage time 80 µs, and fall time 35 µs.