Microsemi Corp. Bipolar Transistors - BJT 2N3762L

The 2N3762L is a PNP silicon switching transistor in a TO-39 package, rated for a collector-emitter voltage of 40 Vdc, collector-base voltage of 40 Vdc, and emitter-base voltage of 5.0 Vdc. It handles a maximum collector current of 1.5 Adc and dissipates up to 1.0 W at 25°C, with thermal resistance junction-to-case of 60°C/W. Operating and storage junction temperatures range from -55°C to +200°C. The device is qualified per MIL-PRF-19500/396 at JAN and JANTX levels. Electrical characteristics for the "L" suffix variant are identical to the corresponding non-"L" device.