Microsemi Corp. TRANSISTORS - Transistors (BJT) - Single - 2N3735L 2N3735L

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 132146-2N3735L Packaging: Bulk Mounting: Through Hole Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 200°C (TJ) Case / Package: TO-5 Maximum Current Collector: 1.5A VCEO Maximum Collector-Emitter Breakdown Voltage: 40V Max Vce (sat): 900mV @ 100mA, 1A Collector Cut-off Current(Max): 10μA (ICBO) Typical Gain (hFE) (Min): 20 @ 1A, 1.5V Maximum Power Dissipation: 1W Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Limited Quantity per package: 1
  • TRANSISTORS - Transistors (BJT) - Single - 2N3735L - 132146-2N3735L - Win Source Electronics
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 132146-2N3735L Packaging: Bulk Mounting: Through Hole Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 200°C (TJ) Case / Package: TO-5 Maximum Current Collector: 1.5A VCEO Maximum Collector-Emitter Breakdown Voltage: 40V Max Vce (sat): 900mV @ 100mA, 1A Collector Cut-off Current(Max): 10μA (ICBO) Typical Gain (hFE) (Min): 20 @ 1A, 1.5V Maximum Power Dissipation: 1W Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Limited Quantity per package: 1
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TRANSISTORS - Transistors (BJT) - Single - 2N3735L - 132146-2N3735L - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2N3735L
132146-2N3735L
TRANSISTORS - Transistors (BJT) - Single - 2N3735L 132146-2N3735L
Manufacturer: Microsemi Corporation Win Source Part Number: 132146-2N3735L Packaging: Bulk Mounting: Through Hole Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 200°C (TJ) Case / Package: TO-5 Maximum Current Collector: 1.5A VCEO Maximum Collector-Emitter Breakdown Voltage: 40V Max Vce (sat): 900mV @ 100mA, 1A Collector Cut-off Current(Max): 10μA (ICBO) Typical Gain (hFE) (Min): 20 @ 1A, 1.5V Maximum Power Dissipation: 1W Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Limited Quantity per package: 1

Manufacturer: Microsemi Corporation
Win Source Part Number: 132146-2N3735L
Packaging: Bulk
Mounting: Through Hole
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -65°C to 200°C (TJ)
Case / Package: TO-5
Maximum Current Collector: 1.5A
VCEO Maximum Collector-Emitter Breakdown Voltage: 40V
Max Vce (sat): 900mV @ 100mA, 1A
Collector Cut-off Current(Max): 10μA (ICBO)
Typical Gain (hFE) (Min): 20 @ 1A, 1.5V
Maximum Power Dissipation: 1W
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Limited
Quantity per package: 1

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VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2N3735L
Bipolar Transistors - BJT 2N3735L
Bipolar Transistors - BJT BJTs

Bipolar Transistors - BJT BJTs

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Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED
Product Category Transistors Bipolar RF Transistors
Product Number 132146-2N3735L 2N3735L
Product Name TRANSISTORS - Transistors (BJT) - Single - 2N3735L Bipolar Transistors - BJT
Polarity NPN; NPN
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