Microsemi Corp. Bipolar Transistors - BJT 2N3735L/TR

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Bipolar Transistors - BJT
Description
Bipolar Transistors - BJT
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The 2N3735L is an NPN silicon switching transistor in a TO-5 package, rated for a collector-emitter voltage of 40 Vdc and a collector current of 1.0 Adc. It dissipates up to 2.9 W at +25°C case temperature, with linear derating of 16.6 mW/°C above that point. The device has a minimum current gain (hFE) of 40 at 500 mA collector current and a collector-emitter saturation voltage of 0.5 V at 500 mA collector and 50 mA base current. Operating and storage junction temperature ranges from -65°C to +200°C. The transistor is qualified per MIL-PRF-19500/395.

Datasheet Summary
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The 2N3735L is an NPN silicon switching transistor in a TO-5 package, rated for a collector-emitter voltage of 40 Vdc and a collector current of 1.0 Adc. It dissipates up to 2.9 W at +25°C case temperature, with linear derating of 16.6 mW/°C above that point. The device has a minimum current gain (hFE) of 40 at 500 mA collector current and a collector-emitter saturation voltage of 0.5 V at 500 mA collector and 50 mA base current. Operating and storage junction temperature ranges from -65°C to +200°C. The transistor is qualified per MIL-PRF-19500/395.

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Bipolar Transistors - BJT
2N3735L/TR
Bipolar Transistors - BJT 2N3735L/TR
Bipolar Transistors - BJT

Bipolar Transistors - BJT

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number 2N3735L/TR
Product Name Bipolar Transistors - BJT
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