Microsemi Corp. TRANSISTORS - Transistors (BJT) - Single - 2N3700 2N3700

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1123756-2N3700 Packaging: Bulk Mounting Style: Through Hole Transistor Type: NPN Categories: Discrete Semiconductor Products Supplier Device Package: TO-18 Temperature Range - Operating: -65°C ~ 200°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-206AA, TO-18-3 Metal Can Current - Collector (Ic) (Maximum): 1A Voltage - Collector Emitter Breakdown (Maximum): 80V Current - Collector Cutoff (Maximum): 10nA Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited Application Field: Used in Industrial Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 500mV at 50mA, 500mA DC Current Gain (hFE) (Minimum) at Ic, Vce: 50 at 500mA, 10V Maximum Power: 500mW
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1123756-2N3700 Packaging: Bulk Mounting Style: Through Hole Transistor Type: NPN Categories: Discrete Semiconductor Products Supplier Device Package: TO-18 Temperature Range - Operating: -65°C ~ 200°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-206AA, TO-18-3 Metal Can Current - Collector (Ic) (Maximum): 1A Voltage - Collector Emitter Breakdown (Maximum): 80V Current - Collector Cutoff (Maximum): 10nA Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited Application Field: Used in Industrial Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 500mV at 50mA, 500mA DC Current Gain (hFE) (Minimum) at Ic, Vce: 50 at 500mA, 10V Maximum Power: 500mW
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TRANSISTORS - Transistors (BJT) - Single - 2N3700 - 1123756-2N3700 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2N3700
1123756-2N3700
TRANSISTORS - Transistors (BJT) - Single - 2N3700 1123756-2N3700
Manufacturer: Microsemi Corporation Win Source Part Number: 1123756-2N3700 Packaging: Bulk Mounting Style: Through Hole Transistor Type: NPN Categories: Discrete Semiconductor Products Supplier Device Package: TO-18 Temperature Range - Operating: -65°C ~ 200°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-206AA, TO-18-3 Metal Can Current - Collector (Ic) (Maximum): 1A Voltage - Collector Emitter Breakdown (Maximum): 80V Current - Collector Cutoff (Maximum): 10nA Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited Application Field: Used in Industrial Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 500mV at 50mA, 500mA DC Current Gain (hFE) (Minimum) at Ic, Vce: 50 at 500mA, 10V Maximum Power: 500mW

Manufacturer: Microsemi Corporation
Win Source Part Number: 1123756-2N3700
Packaging: Bulk
Mounting Style: Through Hole
Transistor Type: NPN
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-18
Temperature Range - Operating: -65°C ~ 200°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-206AA, TO-18-3 Metal Can
Current - Collector (Ic) (Maximum): 1A
Voltage - Collector Emitter Breakdown (Maximum): 80V
Current - Collector Cutoff (Maximum): 10nA
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 500mV at 50mA, 500mA
DC Current Gain (hFE) (Minimum) at Ic, Vce: 50 at 500mA, 10V
Maximum Power: 500mW

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2N3700
Bipolar Transistors - BJT 2N3700
Bipolar Transistors - BJT BJTs

Bipolar Transistors - BJT BJTs

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Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED
Product Category Transistors Bipolar RF Transistors
Product Number 1123756-2N3700 2N3700
Product Name TRANSISTORS - Transistors (BJT) - Single - 2N3700 Bipolar Transistors - BJT
Polarity NPN
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