Microsemi Corp. Bipolar Transistors - BJT 2N3700/TR

The 2N3700 is a low-power NPN silicon transistor housed in a hermetically sealed TO-18 metal package, designed for high-reliability military and aerospace applications. It has a collector-emitter voltage rating of 80 V, a collector current of 1.0 A, and a total power dissipation of 0.5 W at 25 °C ambient temperature. The device features a current gain (hFE) ranging from 15 to 300 depending on operating conditions, with an output capacitance of 12 pF and input capacitance of 60 pF. It is qualified to MIL-PRF-19500/391 standards and available in JAN, JANTX, JANTXV, and JANS reliability levels. The TO-18 package measures 4.52 to 4.95 mm in diameter and 12.70 to 19.05 mm in lead length. Thermal impedance is 325 °C/W junction-to-ambient and 150 °C/W junction-to-case. RoHS compliant versions are available for commercial grade.