Microsemi Corp. TRANSISTORS - Transistors (BJT) - Single - 2N3637UB 2N3637UB

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1003853-2N3637UB Packaging: Bulk Mounting: SMD (SMT) Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 200°C (TJ) Case / Package: UB Maximum Current Collector: 1A VCEO Maximum Collector-Emitter Breakdown Voltage: 175V Max Vce (sat): 600mV @ 5mA, 50mA Collector Cut-off Current(Max): 10μA Typical Gain (hFE) (Min): 100 @ 50mA, 10V Maximum Power Dissipation: 1.5W Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Balance Quantity per package: 1
  • TRANSISTORS - Transistors (BJT) - Single - 2N3637UB - 1003853-2N3637UB - Win Source Electronics
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1003853-2N3637UB Packaging: Bulk Mounting: SMD (SMT) Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 200°C (TJ) Case / Package: UB Maximum Current Collector: 1A VCEO Maximum Collector-Emitter Breakdown Voltage: 175V Max Vce (sat): 600mV @ 5mA, 50mA Collector Cut-off Current(Max): 10μA Typical Gain (hFE) (Min): 100 @ 50mA, 10V Maximum Power Dissipation: 1.5W Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Balance Quantity per package: 1
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TRANSISTORS - Transistors (BJT) - Single - 2N3637UB - 1003853-2N3637UB - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2N3637UB
1003853-2N3637UB
TRANSISTORS - Transistors (BJT) - Single - 2N3637UB 1003853-2N3637UB
Manufacturer: Microsemi Corporation Win Source Part Number: 1003853-2N3637UB Packaging: Bulk Mounting: SMD (SMT) Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 200°C (TJ) Case / Package: UB Maximum Current Collector: 1A VCEO Maximum Collector-Emitter Breakdown Voltage: 175V Max Vce (sat): 600mV @ 5mA, 50mA Collector Cut-off Current(Max): 10μA Typical Gain (hFE) (Min): 100 @ 50mA, 10V Maximum Power Dissipation: 1.5W Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Balance Quantity per package: 1

Manufacturer: Microsemi Corporation
Win Source Part Number: 1003853-2N3637UB
Packaging: Bulk
Mounting: SMD (SMT)
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -65°C to 200°C (TJ)
Case / Package: UB
Maximum Current Collector: 1A
VCEO Maximum Collector-Emitter Breakdown Voltage: 175V
Max Vce (sat): 600mV @ 5mA, 50mA
Collector Cut-off Current(Max): 10μA
Typical Gain (hFE) (Min): 100 @ 50mA, 10V
Maximum Power Dissipation: 1.5W
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Balance
Quantity per package: 1

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VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2N3637UB
Bipolar Transistors - BJT 2N3637UB
Bipolar Transistors - BJT BJTs

Bipolar Transistors - BJT BJTs

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Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED
Product Category Transistors Bipolar RF Transistors
Product Number 1003853-2N3637UB 2N3637UB
Product Name TRANSISTORS - Transistors (BJT) - Single - 2N3637UB Bipolar Transistors - BJT
Polarity PNP; PNP
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