PNP silicon switching transistor with a collector-emitter voltage rating of 175 Vdc and a collector current of 1.0 Adc, housed in a TO-39 package. It has a total power dissipation of 1.5 W at +25°C and operates within a junction temperature range of -65 to +200°C. The device meets MIL-PRF-19500/357 qualification standards. Forward current transfer ratio ranges from 60 to 300 at collector currents of 150 mA and 50 mA, respectively, with a collector-emitter saturation voltage of 0.6 Vdc at 50 mA collector current and 5 mA base current. Input capacitance is 75 pF, output capacitance is 10 pF, and the noise figure is 3.0 dB at 1.0 kHz.
Bipolar Transistors - BJT BJTs
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 2N3637UB/TR |
| Product Name | Bipolar Transistors - BJT |
