Microsemi Corp. Bipolar Transistors - BJT 2N3637/TR

The 2N3637/TR is a PNP silicon switching transistor in a TO-39 package, rated for 175 Vdc collector-emitter and collector-base voltages, with a 1.0 Adc collector current and 1.0 W power dissipation at +25°C. It operates from -65°C to +200°C and meets MIL-PRF-19500/357 qualification. The forward current transfer ratio (hFE) ranges from 60 to 300 at Ic=150mA and Vce=10V. Collector-emitter saturation voltage is 0.6 Vdc at Ic=50mA and Ib=5mA. Base-emitter saturation voltage is 0.6 to 0.9 Vdc under specified conditions. Input impedance is 200 to 1200 Ω, input capacitance is 75 pF, output capacitance is 10 pF, and noise figure is 3.0 dB at 1.0-10 kHz with Ic=0.5 mA.