Microsemi Corp. TRANSISTORS - Transistors (BJT) - Single - 2N3636 2N3636

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 762209-2N3636 Packaging: Bulk Mounting Style: Through Hole Operating Temperature Range: -65°C ~ 200°C (TJ) Package: TO-205AD, TO-39-3 Metal Can Power - Max: 1W Transistor Type: PNP Family Name: 2N3636 Categories: Discrete Semiconductor Products Manufacturer Package: TO-39 Current - Collector (Ic) (Maximum): 1A Voltage - Collector Emitter Breakdown (Maximum): 175V Vce Saturation (Maximum) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Maximum): 10μA DC Current Gain (hFE) (Minimum) @ Ic, Vce: 50 @ 50mA, 10V Alternative Parts (Cross-Reference): 2N3636; JANTX2N3636; ; Introduction Date: April 08, 2001 ECCN: EAR99 Country of Origin: Philippines Estimated EOL Date: 2027 Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Limited Quantity per package: 1
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 762209-2N3636 Packaging: Bulk Mounting Style: Through Hole Operating Temperature Range: -65°C ~ 200°C (TJ) Package: TO-205AD, TO-39-3 Metal Can Power - Max: 1W Transistor Type: PNP Family Name: 2N3636 Categories: Discrete Semiconductor Products Manufacturer Package: TO-39 Current - Collector (Ic) (Maximum): 1A Voltage - Collector Emitter Breakdown (Maximum): 175V Vce Saturation (Maximum) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Maximum): 10μA DC Current Gain (hFE) (Minimum) @ Ic, Vce: 50 @ 50mA, 10V Alternative Parts (Cross-Reference): 2N3636; JANTX2N3636; ; Introduction Date: April 08, 2001 ECCN: EAR99 Country of Origin: Philippines Estimated EOL Date: 2027 Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Limited Quantity per package: 1
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Suppliers

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TRANSISTORS - Transistors (BJT) - Single - 2N3636 - 762209-2N3636 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2N3636
762209-2N3636
TRANSISTORS - Transistors (BJT) - Single - 2N3636 762209-2N3636
Manufacturer: Microsemi Corporation Win Source Part Number: 762209-2N3636 Packaging: Bulk Mounting Style: Through Hole Operating Temperature Range: -65°C ~ 200°C (TJ) Package: TO-205AD, TO-39-3 Metal Can Power - Max: 1W Transistor Type: PNP Family Name: 2N3636 Categories: Discrete Semiconductor Products Manufacturer Package: TO-39 Current - Collector (Ic) (Maximum): 1A Voltage - Collector Emitter Breakdown (Maximum): 175V Vce Saturation (Maximum) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Maximum): 10μA DC Current Gain (hFE) (Minimum) @ Ic, Vce: 50 @ 50mA, 10V Alternative Parts (Cross-Reference): 2N3636; JANTX2N3636; ; Introduction Date: April 08, 2001 ECCN: EAR99 Country of Origin: Philippines Estimated EOL Date: 2027 Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Limited Quantity per package: 1

Manufacturer: Microsemi Corporation
Win Source Part Number: 762209-2N3636
Packaging: Bulk
Mounting Style: Through Hole
Operating Temperature Range: -65°C ~ 200°C (TJ)
Package: TO-205AD, TO-39-3 Metal Can
Power - Max: 1W
Transistor Type: PNP
Family Name: 2N3636
Categories: Discrete Semiconductor Products
Manufacturer Package: TO-39
Current - Collector (Ic) (Maximum): 1A
Voltage - Collector Emitter Breakdown (Maximum): 175V
Vce Saturation (Maximum) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Maximum): 10μA
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 50 @ 50mA, 10V
Alternative Parts (Cross-Reference): 2N3636; JANTX2N3636; ;
Introduction Date: April 08, 2001
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: 2027
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Limited
Quantity per package: 1

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Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED
Product Category Transistors Bipolar RF Transistors
Product Number 762209-2N3636 2N3636
Product Name TRANSISTORS - Transistors (BJT) - Single - 2N3636 Bipolar Transistors - BJT
Polarity PNP
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