Microsemi Corp. Bipolar Transistors - BJT 2N3501UB/TR

The 2N3501UB/TR is a surface-mount NPN silicon switching transistor in a low-profile ceramic U4 package, designed for high-reliability and military applications. It has a collector-emitter voltage rating of 150 V, a collector current of 300 mA, and a total power dissipation of 1.5 W at 25 °C. Thermal resistance is 90 °C/W from junction to solder pad and 325 °C/W from junction to ambient. The device meets MIL-PRF-19500/366 qualification levels including JAN, JANTX, JANTXV, and JANS, and is RoHS compliant by design. Weight is less than 0.04 grams. Electrical characteristics include a minimum hFE of 20 at 300 mA collector current and an output capacitance of 8.0 pF at 10 V. Switching times are 115 ns turn-on and 1150 ns turn-off under specified conditions. Package dimensions conform to EIA-418D tape and reel standards.