Microsemi Corp. TRANSISTORS - Transistors (BJT) - Single - 2N3501 2N3501

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 113253-2N3501 Packaging: Bulk Mounting: Through Hole Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 200°C (TJ) Case / Package: TO-39 (TO-205AD) Maximum Current Collector: 300mA VCEO Maximum Collector-Emitter Breakdown Voltage: 150V Max Vce (sat): 400mV @ 15mA, 150mA Collector Cut-off Current(Max): 10μA (ICBO) Typical Gain (hFE) (Min): 100 @ 150mA, 10V Maximum Power Dissipation: 1W Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors (BJT) - Single - 2N3501 - 113253-2N3501 - Win Source Electronics
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 113253-2N3501 Packaging: Bulk Mounting: Through Hole Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 200°C (TJ) Case / Package: TO-39 (TO-205AD) Maximum Current Collector: 300mA VCEO Maximum Collector-Emitter Breakdown Voltage: 150V Max Vce (sat): 400mV @ 15mA, 150mA Collector Cut-off Current(Max): 10μA (ICBO) Typical Gain (hFE) (Min): 100 @ 150mA, 10V Maximum Power Dissipation: 1W Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors (BJT) - Single - 2N3501 - 113253-2N3501 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2N3501
113253-2N3501
TRANSISTORS - Transistors (BJT) - Single - 2N3501 113253-2N3501
Manufacturer: Microsemi Corporation Win Source Part Number: 113253-2N3501 Packaging: Bulk Mounting: Through Hole Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 200°C (TJ) Case / Package: TO-39 (TO-205AD) Maximum Current Collector: 300mA VCEO Maximum Collector-Emitter Breakdown Voltage: 150V Max Vce (sat): 400mV @ 15mA, 150mA Collector Cut-off Current(Max): 10μA (ICBO) Typical Gain (hFE) (Min): 100 @ 150mA, 10V Maximum Power Dissipation: 1W Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Balance

Manufacturer: Microsemi Corporation
Win Source Part Number: 113253-2N3501
Packaging: Bulk
Mounting: Through Hole
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -65°C to 200°C (TJ)
Case / Package: TO-39 (TO-205AD)
Maximum Current Collector: 300mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 150V
Max Vce (sat): 400mV @ 15mA, 150mA
Collector Cut-off Current(Max): 10μA (ICBO)
Typical Gain (hFE) (Min): 100 @ 150mA, 10V
Maximum Power Dissipation: 1W
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance

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VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2N3501
Bipolar Transistors - BJT 2N3501
Bipolar Transistors - BJT BJTs

Bipolar Transistors - BJT BJTs

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Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED
Product Category Transistors Bipolar RF Transistors
Product Number 113253-2N3501 2N3501
Product Name TRANSISTORS - Transistors (BJT) - Single - 2N3501 Bipolar Transistors - BJT
Polarity NPN; NPN
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