Manufacturer: Microsemi Corporation
Win Source Part Number: 113253-2N3501
Packaging: Bulk
Mounting: Through Hole
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -65°C to 200°C (TJ)
Case / Package: TO-39 (TO-205AD)
Maximum Current Collector: 300mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 150V
Max Vce (sat): 400mV @ 15mA, 150mA
Collector Cut-off Current(Max): 10μA (ICBO)
Typical Gain (hFE) (Min): 100 @ 150mA, 10V
Maximum Power Dissipation: 1W
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance
Bipolar Transistors - BJT BJTs
| Win Source Electronics | VAST STOCK CO., LIMITED | |
|---|---|---|
| Product Category | Transistors | Bipolar RF Transistors |
| Product Number | 113253-2N3501 | 2N3501 |
| Product Name | TRANSISTORS - Transistors (BJT) - Single - 2N3501 | Bipolar Transistors - BJT |
| Polarity | NPN; NPN |
