Microsemi Corp. Bipolar Transistors - BJT 2N3501/TR

The 2N3501 is an NPN silicon transistor designed for high-reliability and medium-power applications requiring high-frequency switching. It is available in TO-39 (TO-205AD) and U4 surface-mount packages, with a hermetically sealed kovar base and nickel cap. The device has a collector-emitter voltage rating of 150 V, a collector current rating of 300 mA, and a power dissipation of 15 W at 25 °C. Thermal resistance is 30 °C/W junction-to-case and 175 °C/W junction-to-ambient. It operates over a junction temperature range of -65 to +200 °C. Electrical characteristics include a forward current gain (hFE) of 20 to 300 depending on operating conditions, a collector-emitter saturation voltage of 0.4 V at 150 mA collector current, and an output capacitance of 8.0 pF. Qualifications include JAN, JANTX, JANTXV, and JANS levels per MIL-PRF-19500/366. RoHS-compliant versions are available for commercial grade only.