Microsemi Corp. Bipolar Transistors - BJT 2N3500/TR

The 2N3500 is an NPN silicon transistor designed for medium power, high-frequency switching in military and high-reliability applications. It is available in TO-39 (TO-205AD) and TO-5 packages, with a hermetically sealed kovar base and nickel cap. The device has a collector-emitter voltage rating of 150 V, a collector-base voltage of 150 V, and a maximum collector current of 300 mA. Thermal resistance is 30 °C/W junction-to-case and 175 °C/W junction-to-ambient. It operates over a junction temperature range of -65 to +200 °C. The transistor is qualified to JANTX and JANS levels per MIL-PRF-19500/366.