Microsemi Corp. Bipolar Transistors - BJT 2N3486A/TR

The 2N3486A is a PNP silicon small signal transistor in a TO-46 package, rated for a collector-emitter voltage of 60 Vdc, collector current of 600 mAdc, and total power dissipation of 2.0 W at +25°C case temperature. Its operating and storage junction temperature range is -55°C to +200°C. The device meets MIL-PRF-19500/392 qualification standards. Forward current transfer ratio (hFE) ranges from 100 to 300 at 150 mA collector current and 10 V collector-emitter voltage. Collector-emitter saturation voltage is 1.6 V at 500 mA collector current and 50 mA base current. Input capacitance is 30 pF, and output capacitance is 8.0 pF. Thermal resistance junction-to-case is 87 °C/W.