Microsemi Corp. Bipolar Transistors - BJT 2N3486/TR

PNP silicon small signal transistor qualified per MIL-PRF-19500/392 for JAN, JANTX, and JANTXV levels, housed in a TO-46 (TO-206AB) package. Rated for a collector-emitter voltage of 60 Vdc, collector-base voltage of 60 Vdc, and emitter-base voltage of 5.0 Vdc. Continuous collector current is 600 mAdc with a total power dissipation of 0.4 W at +25°C ambient and 2.0 W at +25°C case temperature. Operating and storage junction temperature range is -55°C to +200°C. Current gain (hFE) ranges from 40 to 300 depending on collector current and voltage conditions. Collector-emitter saturation voltage is 0.4 Vdc at 150 mA collector and 15 mA base current, rising to 1.6 Vdc at 500 mA collector and 50 mA base current. Input capacitance is 30 pF, output capacitance is 8.0 pF.