Microsemi Corp. Bipolar Transistors - BJT 2N3468L

2N3468L is a PNP silicon switching transistor in a TO-39 package, rated for a collector-emitter voltage of 50 Vdc, collector-base voltage of 50 Vdc, and emitter-base voltage of 5.0 Vdc. It supports a maximum collector current of 1.0 Adc and a total power dissipation of 5.0 W at +25°C with derating above that temperature. The operating and storage junction temperature range is -55°C to +175°C. The device meets MIL-PRF-19500/348 qualification standards. Its forward-current transfer ratio ranges from 25 to 75 at 500 mAdc collector current and 1.0 Vdc collector-emitter voltage. Switching characteristics include a rise time of 30 ns, delay time of 10 ns, storage time of 60 ns, and fall time of 30 ns under specified test conditions.