Microsemi Corp. Bipolar Transistors - BJT 2N3467L

2N3467L is a PNP silicon switching transistor in a TO-39 package, rated for 40 Vdc collector-emitter and collector-base voltage, and 5.0 Vdc emitter-base voltage. It handles 1.0 Adc collector current and dissipates 1.0 W at +25°C, derating linearly above that temperature. Operating and storage junction temperature ranges from -55°C to +175°C. Forward-current transfer ratio is 40 to 120 at 500 mA collector current. Collector-emitter saturation voltage is up to 0.6 V at 500 mA collector and 50 mA base current. Base-emitter saturation voltage is 0.8 to 1.2 V under the same conditions. Output capacitance is 25 pF, input capacitance is 100 pF. Switching times: delay 10 ns, rise 30 ns, storage 60 ns, fall 30 ns. Qualified per MIL-PRF-19500/348.