Microsemi Corp. Bipolar Transistors - BJT 2N3467

The 2N3467 is a PNP silicon switching transistor in a TO-39 package, designed for high-reliability switching applications. It has a collector-emitter voltage rating of 40 Vdc, a collector current rating of 1.0 Adc, and a total power dissipation of 1.0 W at +25°C. The junction operating and storage temperature range is -55°C to +175°C. The forward-current transfer ratio (hFE) is a minimum of 40 at 150 mA collector current and 1.0 V collector-emitter voltage, and remains at least 40 at 1.0 A collector current. The collector-emitter saturation voltage is 0.35 V at 150 mA collector current and 15 mA base current. It is qualified to MIL-PRF-19500/348 for JAN grade applications.