Microsemi Corp. Bipolar Transistors - BJT 2N3439UA/TR

The 2N3439UA is a high-frequency, epitaxial planar NPN silicon transistor in a hermetically sealed ceramic UA package with a low profile, designed for medium power applications requiring fast switching and high reliability. It has a collector-emitter voltage rating of 350 V, a collector current of 1.0 A, and a total power dissipation of 2.0 W at a solder pad temperature of +25°C. The transistor exhibits a collector-emitter saturation voltage of 0.5 V at 50 mA collector current and 4.0 mA base current. Turn-on time is 1.0 µs max, and turn-off time is 10 µs max under specified conditions. The device is qualified to MIL-PRF-19500/368 for JAN, JANTX, JANTXV, and JANS reliability levels, and is RoHS compliant by design. The package has gold-plated terminals and weighs 0.12 grams.