Microsemi Corp. TRANSISTORS - Transistors (BJT) - Single - 2N3250A 2N3250A

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 133712-2N3250A Packaging: Bulk Mounting: Through Hole Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 200°C (TJ) Case / Package: TO-39 (TO-205AD) Maximum Current Collector: 200mA VCEO Maximum Collector-Emitter Breakdown Voltage: 60V Max Vce (sat): 500mV @ 5mA, 50mA Collector Cut-off Current(Max): 10μA (ICBO) Typical Gain (hFE) (Min): 50 @ 10mA, 1V Maximum Power Dissipation: 360mW Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited Quantity per package: 1
  • TRANSISTORS - Transistors (BJT) - Single - 2N3250A - 133712-2N3250A - Win Source Electronics
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 133712-2N3250A Packaging: Bulk Mounting: Through Hole Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 200°C (TJ) Case / Package: TO-39 (TO-205AD) Maximum Current Collector: 200mA VCEO Maximum Collector-Emitter Breakdown Voltage: 60V Max Vce (sat): 500mV @ 5mA, 50mA Collector Cut-off Current(Max): 10μA (ICBO) Typical Gain (hFE) (Min): 50 @ 10mA, 1V Maximum Power Dissipation: 360mW Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited Quantity per package: 1
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TRANSISTORS - Transistors (BJT) - Single - 2N3250A - 133712-2N3250A - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2N3250A
133712-2N3250A
TRANSISTORS - Transistors (BJT) - Single - 2N3250A 133712-2N3250A
Manufacturer: Microsemi Corporation Win Source Part Number: 133712-2N3250A Packaging: Bulk Mounting: Through Hole Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 200°C (TJ) Case / Package: TO-39 (TO-205AD) Maximum Current Collector: 200mA VCEO Maximum Collector-Emitter Breakdown Voltage: 60V Max Vce (sat): 500mV @ 5mA, 50mA Collector Cut-off Current(Max): 10μA (ICBO) Typical Gain (hFE) (Min): 50 @ 10mA, 1V Maximum Power Dissipation: 360mW Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited Quantity per package: 1

Manufacturer: Microsemi Corporation
Win Source Part Number: 133712-2N3250A
Packaging: Bulk
Mounting: Through Hole
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -65°C to 200°C (TJ)
Case / Package: TO-39 (TO-205AD)
Maximum Current Collector: 200mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 60V
Max Vce (sat): 500mV @ 5mA, 50mA
Collector Cut-off Current(Max): 10μA (ICBO)
Typical Gain (hFE) (Min): 50 @ 10mA, 1V
Maximum Power Dissipation: 360mW
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Limited
Quantity per package: 1

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2N3250A
Bipolar Transistors - BJT 2N3250A
Bipolar Transistors - BJT BJTs

Bipolar Transistors - BJT BJTs

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Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED
Product Category Transistors Bipolar RF Transistors
Product Number 133712-2N3250A 2N3250A
Product Name TRANSISTORS - Transistors (BJT) - Single - 2N3250A Bipolar Transistors - BJT
Polarity PNP; PNP
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