Microsemi Corp. Bipolar Transistors - BJT 2N3250A/TR

The 2N3250A is a PNP silicon switching transistor in a TO-39 package, rated for a collector-emitter voltage of 60 Vdc, a collector current of 200 mAdc, and a total power dissipation of 0.36 W at 25°C. It operates over a junction and storage temperature range of -65°C to +175°C. The device has a thermal resistance of 417°C/W. Forward-current transfer ratio ranges from 50 to 150 at 10 mA collector current. Collector-emitter saturation voltage is 0.25 V at 10 mA collector and 1 mA base current. Switching times are 70 µs turn-on and 250 µs turn-off. The part is qualified per MIL-PRF-19500/323.