Microsemi Corp. Bipolar Transistors - BJT 2N3057A/TR

The 2N3057A is a low-power NPN silicon transistor designed for general-purpose switching and amplifier applications in military and high-reliability environments. It is packaged in a TO-46 metal case with a low-profile nickel cap and gold-plated kovar leads, weighing approximately 0.234 grams. Maximum ratings include a collector-emitter voltage of 80 V, a collector-base voltage of 140 V, a collector current of 1.0 A, and a total power dissipation of 0.5 W at 25 °C ambient temperature. Thermal impedance is 325 °C/W junction-to-ambient and 80 °C/W junction-to-case. It meets MIL-PRF-19500/391 qualification standards and is RoHS compliant by design. The device is available in JAN, JANTX, JANTXV, and JANS reliability levels.