Microsemi Corp. Bipolar Transistors - BJT 2N3019/TR

The 2N3019 is a low-power NPN silicon transistor in a TO-5 hermetically sealed package with a kovar base and nickel cap, designed for military and high-reliability applications. It has a collector-emitter voltage rating of 80 V, collector-base voltage of 140 V, and emitter-base voltage of 7.0 V. The collector current is rated at 1.0 A, with a total power dissipation of 0.8 W at 25 °C ambient temperature. Thermal resistance is 195 °C/W junction-to-ambient and 30 °C/W junction-to-case. The device meets MIL-PRF-19500/391 qualification standards and is RoHS compliant by design. The TO-5 package dimensions include a lead length of 38.10 to 44.45 mm and a body diameter of 7.75 to 8.51 mm. The part is available in JAN, JANTX, JANTXV, and JANS reliability levels, with the +TR suffix indicating tape and reel packaging.