Microsemi Corp. Bipolar Transistors - BJT 2N2946AUB/TR

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Bipolar Transistors - BJT BJTs
Description
Bipolar Transistors - BJT BJTs
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The 2N2946AUB/TR is a PNP silicon small signal transistor in a UB surface mount package, designed for high-reliability applications. It features a collector-to-emitter voltage rating of -35 V, a collector current of -100 mA, and a total power dissipation of 400 mW at 25°C. The device has a thermal resistance of 435°C/W and meets MIL-PRF-19500/382 qualifications up to JANTXV level. ESD performance complies with MIL-STD-750, method 1020, Class 3. The package is a low-profile metal can with gold-plated terminals, weighs 0.234 grams, and is RoHS compliant. Minimum DC current gain is 50 at -1.0 mA collector current and -0.5 V collector-emitter voltage.

Datasheet Summary
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The 2N2946AUB/TR is a PNP silicon small signal transistor in a UB surface mount package, designed for high-reliability applications. It features a collector-to-emitter voltage rating of -35 V, a collector current of -100 mA, and a total power dissipation of 400 mW at 25°C. The device has a thermal resistance of 435°C/W and meets MIL-PRF-19500/382 qualifications up to JANTXV level. ESD performance complies with MIL-STD-750, method 1020, Class 3. The package is a low-profile metal can with gold-plated terminals, weighs 0.234 grams, and is RoHS compliant. Minimum DC current gain is 50 at -1.0 mA collector current and -0.5 V collector-emitter voltage.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2N2946AUB/TR
Bipolar Transistors - BJT 2N2946AUB/TR
Bipolar Transistors - BJT BJTs

Bipolar Transistors - BJT BJTs

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number 2N2946AUB/TR
Product Name Bipolar Transistors - BJT
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