Microsemi Corp. TRANSISTORS - Transistors (BJT) - Arrays - 2N2919 2N2919

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 134569-2N2919 Packaging: Bulk Mounting: Through Hole Transistor Polarity: 2 NPN (Dual) Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 200°C (TJ) Case / Package: TO-78-6 Maximum Current Collector: 30mA VCEO Maximum Collector-Emitter Breakdown Voltage: 60V Max Vce (sat): 300mV @ 100μA, 1mA Collector Cut-off Current(Max): 10μA (ICBO) Typical Gain (hFE) (Min): 150 @ 1mA, 5V Maximum Power Dissipation: 350mW Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 134569-2N2919 Packaging: Bulk Mounting: Through Hole Transistor Polarity: 2 NPN (Dual) Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 200°C (TJ) Case / Package: TO-78-6 Maximum Current Collector: 30mA VCEO Maximum Collector-Emitter Breakdown Voltage: 60V Max Vce (sat): 300mV @ 100μA, 1mA Collector Cut-off Current(Max): 10μA (ICBO) Typical Gain (hFE) (Min): 150 @ 1mA, 5V Maximum Power Dissipation: 350mW Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited
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Suppliers

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TRANSISTORS - Transistors (BJT) - Arrays - 2N2919 - 134569-2N2919 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays - 2N2919
134569-2N2919
TRANSISTORS - Transistors (BJT) - Arrays - 2N2919 134569-2N2919
Manufacturer: Microsemi Corporation Win Source Part Number: 134569-2N2919 Packaging: Bulk Mounting: Through Hole Transistor Polarity: 2 NPN (Dual) Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 200°C (TJ) Case / Package: TO-78-6 Maximum Current Collector: 30mA VCEO Maximum Collector-Emitter Breakdown Voltage: 60V Max Vce (sat): 300mV @ 100μA, 1mA Collector Cut-off Current(Max): 10μA (ICBO) Typical Gain (hFE) (Min): 150 @ 1mA, 5V Maximum Power Dissipation: 350mW Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited

Manufacturer: Microsemi Corporation
Win Source Part Number: 134569-2N2919
Packaging: Bulk
Mounting: Through Hole
Transistor Polarity: 2 NPN (Dual)
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 200°C (TJ)
Case / Package: TO-78-6
Maximum Current Collector: 30mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 60V
Max Vce (sat): 300mV @ 100μA, 1mA
Collector Cut-off Current(Max): 10μA (ICBO)
Typical Gain (hFE) (Min): 150 @ 1mA, 5V
Maximum Power Dissipation: 350mW
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited

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Sheung Wan, Hong Kong
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Bipolar Transistors - BJT 2N2919
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Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED
Product Category Transistors Bipolar RF Transistors
Product Number 134569-2N2919 2N2919
Product Name TRANSISTORS - Transistors (BJT) - Arrays - 2N2919 Bipolar Transistors - BJT
Polarity NPN; 2 NPN (Dual)
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