Microsemi Corp. Bipolar Transistors - BJT 2N2907AUB

The 2N2907AUB is a PNP small signal silicon transistor in a TO-18 (TO-206AA) package, rated for a collector-emitter voltage of 60 Vdc, collector current of 600 mAdc, and total power dissipation of 0.5 W at 25°C. It operates over a junction temperature range of -65 to +200 °C. The device meets MIL-PRF-19500/291 qualification standards and features a collector-base cutoff current of 10 μAdc at 60 Vdc and an emitter-base cutoff current of 50 nAdc at 4.0 Vdc. Its forward current transfer ratio ranges from 100 to 300 at 150 mA collector current and 10 V collector-emitter voltage. Collector-emitter saturation voltage is 0.4 V at 150 mA collector current and 15 mA base current, rising to 1.6 V at 500 mA collector current and 50 mA base current. The collector is internally connected to the case.