Microsemi Corp. Bipolar Transistors - BJT 2N2907AUB/TR

The 2N2907AUB/TR is a PNP silicon small signal transistor in a surface-mount package with a TO-18-style metal case, rated for a maximum collector-emitter voltage of 60 Vdc, collector current of 600 mAdc, and power dissipation of 0.5 W at 25°C. It operates over a junction temperature range of -65°C to +200°C. The device has a minimum current gain (hFE) of 100 at 10 mA collector current and 50 at 500 mA, with collector-emitter saturation voltage of 1.6 V at 500 mA collector and 50 mA base current. It meets MIL-PRF-19500/291 qualification standards and is available in JANS quality level.