Microsemi Corp. Bipolar Transistors - BJT 2N2907AL

The 2N2907AL is a PNP small signal silicon transistor in a TO-18 package, designed for low-power switching and amplification applications. It has a collector-emitter voltage rating of 60 Vdc, a collector current rating of 600 mAdc, and a total power dissipation of 0.5 W at 25°C. The device operates across a junction temperature range of -65°C to +200°C. The forward current transfer ratio (hFE) ranges from 100 to 450 at IC = 1.0 mA and VCE = 10 V, and from 100 to 300 at IC = 150 mA. Collector-emitter saturation voltage is 0.4 V at IC = 150 mA and IB = 15 mA. The part is qualified to MIL-PRF-19500/291 standards and features a ceramic lid option for enhanced reliability in high-reliability applications.