The 2N2907Ae4/TR is a PNP silicon small signal transistor in the 2N2907A series, designed for general-purpose amplification and switching applications. It is packaged in a TO-18 metal case with a diameter of 4.52 to 4.95 mm and a height of 5.31 to 5.84 mm. The device has a collector-emitter voltage rating of 60 Vdc, a collector current rating of 600 mAdc, and a total power dissipation of 0.5 W at 25°C. The operating and storage junction temperature range is -65 to +200°C. It meets MIL-PRF-19500/291 qualifications. The 2N2907A variant has a minimum forward current transfer ratio (hFE) of 100 at 10 mA collector current and 10 V collector-emitter voltage, and a collector-emitter saturation voltage of 0.4 V at 150 mA collector and 15 mA base current. The part number includes a trailing tape and reel code, indicating it is supplied in tape packaging.
Bipolar Transistors - BJT BJTs
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 2N2907Ae4/TR |
| Product Name | Bipolar Transistors - BJT |
