Microsemi Corp. Bipolar Transistors - BJT 2N2907Ae3

The 2N2907A series consists of PNP small signal silicon transistors qualified per MIL-PRF-19500/291, packaged in a TO-18 (TO-206AA) case with dimensions of 0.178 to 0.195 inches in diameter and 0.209 to 0.230 inches in height. The device has a collector-emitter voltage rating of 60 Vdc, collector current of 600 mA, and total power dissipation of 0.5 W at 25°C. The operating and storage junction temperature ranges from -65°C to +200°C. The forward current transfer ratio (hFE) varies from 40 to 450 depending on bias conditions, with a collector-emitter saturation voltage of up to 1.6 V at 500 mA collector current. The input capacitance is 30 pF and output capacitance is 8.0 pF at 100 kHz. The part supports turn-on and turn-off times of 45 μs and 300 μs respectively under specified switching conditions.