Microsemi Corp. Bipolar Transistors - BJT 2N2907A/TR

The 2N2907A/TR is a PNP small signal silicon transistor in a TO-18 package, designed for general-purpose amplification and switching applications. It has a collector-emitter voltage rating of 60 Vdc, a collector current of 600 mAdc, and a total power dissipation of 0.5 W at 25°C. The transistor features a minimum current gain (hFE) of 100 at 10 mA collector current and 50 at 500 mA, with a collector-emitter saturation voltage of 0.4 V at 150 mA collector current and 15 mA base current. The device is qualified to MIL-PRF-19500/291 and operates over a junction temperature range of -65°C to +200°C. Package dimensions follow the TO-206AA standard, with leads configured as emitter, base, and collector.