Microsemi Corp. Bipolar Transistors - BJT 2N2906AUB

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Bipolar Transistors - BJT BJTs
Description
Bipolar Transistors - BJT BJTs
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The 2N2906AUB is a PNP silicon small signal transistor packaged in a metal TO-18 case with three leads, designed for switching and amplification applications. It has a collector-emitter voltage rating of 60 Vdc, a collector current capacity of 600 mAdc, and a total power dissipation of 0.5 W at 25°C. The device meets MIL-PRF-19500/291 qualifications with a junction temperature range of -65°C to +200°C. The collector is internally connected to the case, and the package dimensions conform to the TO-206AA standard. Minimum forward current transfer ratio (hFE) is 40 at 150 mA collector current.

Datasheet Summary
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The 2N2906AUB is a PNP silicon small signal transistor packaged in a metal TO-18 case with three leads, designed for switching and amplification applications. It has a collector-emitter voltage rating of 60 Vdc, a collector current capacity of 600 mAdc, and a total power dissipation of 0.5 W at 25°C. The device meets MIL-PRF-19500/291 qualifications with a junction temperature range of -65°C to +200°C. The collector is internally connected to the case, and the package dimensions conform to the TO-206AA standard. Minimum forward current transfer ratio (hFE) is 40 at 150 mA collector current.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2N2906AUB
Bipolar Transistors - BJT 2N2906AUB
Bipolar Transistors - BJT BJTs

Bipolar Transistors - BJT BJTs

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number 2N2906AUB
Product Name Bipolar Transistors - BJT
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