Microsemi Corp. Bipolar Transistors - BJT 2N2906AUB/TR

The 2N2906AUB/TR is a PNP silicon small signal transistor in a TO-18 metal case package, designed for general-purpose switching and amplification applications. It has a collector-emitter voltage rating of 60 Vdc, a collector current of 600 mAdc, and a total power dissipation of 0.5 W at 25°C. The device meets MIL-PRF-19500/291 qualification standards. Its electrical characteristics include a minimum DC current gain (hFE) of 40 at 150 mA collector current and 10 V collector-emitter voltage, with a collector-emitter saturation voltage of 0.4 V at 150 mA collector and 15 mA base current. The turn-on time is 45 μs and turn-off time is 300 μs under specified switching conditions. The package has three leads, with the collector internally connected to the case.