Microsemi Corp. Bipolar Transistors - BJT 2N2906AL

The 2N2906AL is a PNP small signal silicon transistor in a TO-18 (TO-206AA) package, rated for a collector-emitter voltage of 60 Vdc, collector current of 600 mAdc, and total power dissipation of 0.5 W at 25°C. It operates over a junction temperature range of -65°C to +200°C and is qualified to MIL-PRF-19500/291. The forward current transfer ratio (hFE) ranges from 40 to 175 at collector currents between 1.0 mA and 10 mA, with a collector-emitter saturation voltage of 0.4 V at 150 mA collector current and 15 mA base current. The transistor has an input capacitance of 30 pF and an output capacitance of 8.0 pF. The case is internally connected to the collector.