Microsemi Corp. Bipolar Transistors - BJT 2N2904/TR

The 2N2904/TR is a PNP silicon switching transistor in a TO-39 (TO-205AD) package, designed for general purpose high-speed switching and high-reliability applications. It has a collector-emitter voltage rating of 40 V, a collector-base voltage rating of 60 V, and an emitter-base voltage rating of 5.0 V. The device supports a maximum collector current of 600 mA and a total power dissipation of 3.8 W at 25 °C. Thermal resistance from junction-to-ambient is 195 °C/W and junction-to-case is 50 °C/W. It operates and stores within a temperature range of -65 to +200 °C. The part is hermetically sealed with a kovar base and nickel cap, with nickel-plated leads featuring a solder finish. It meets MIL-PRF-19500/290 qualifications for JAN, JANTX, JANTXV, and JANS reliability levels. The /TR suffix indicates tape and reel packaging, consistent with the documented series.