Microsemi Corp. JFET 2N2609

Description
JFET JFETs
Description
JFET JFETs
Datasheet
Datasheet Summary
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The 2N2609 is a P-channel JFET designed for analog switching and amplification applications, housed in a TO-18 (TO-206AA) metal can package. It has a gate-source breakdown voltage of 30 V, a drain current range of -2.0 to -10.0 mA at VDS = 5.0 V, and a gate-source cutoff voltage of 0.75 to 6.0 V. The device operates with a power dissipation of 300 mW at 25°C and is qualified per MIL-PRF-19500/296. Its operating and storage junction temperature range is -65 to +200°C.

Datasheet Summary
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The 2N2609 is a P-channel JFET designed for analog switching and amplification applications, housed in a TO-18 (TO-206AA) metal can package. It has a gate-source breakdown voltage of 30 V, a drain current range of -2.0 to -10.0 mA at VDS = 5.0 V, and a gate-source cutoff voltage of 0.75 to 6.0 V. The device operates with a power dissipation of 300 mW at 25°C and is qualified per MIL-PRF-19500/296. Its operating and storage junction temperature range is -65 to +200°C.

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JFET JFETs

JFET JFETs

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Transistors
Product Number 2N2609
Product Name JFET
Transistor Type JFET
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