Microsemi Corp. JFET 2N2608

Description
JFET JFETs
Description
JFET JFETs
Datasheet
Datasheet Summary
Powered by GS/AI

The 2N2608 is a P-channel JFET designed for analog switching and amplification applications, packaged in a TO-18 (TO-206AA) metal case. It has a gate-source breakdown voltage of 30 V, a maximum drain current of 5.0 mA, and a gate-source cutoff voltage range of 0.75 to 6.0 V. Power dissipation is rated at 300 mW at +25°C, derating linearly at 1.71 mW/°C above that temperature. Operating and storage junction temperatures range from -65°C to +200°C. The device meets MIL-PRF-19500/295 qualification standards.

Datasheet Summary
Powered by GS/AI

The 2N2608 is a P-channel JFET designed for analog switching and amplification applications, packaged in a TO-18 (TO-206AA) metal case. It has a gate-source breakdown voltage of 30 V, a maximum drain current of 5.0 mA, and a gate-source cutoff voltage range of 0.75 to 6.0 V. Power dissipation is rated at 300 mW at +25°C, derating linearly at 1.71 mW/°C above that temperature. Operating and storage junction temperatures range from -65°C to +200°C. The device meets MIL-PRF-19500/295 qualification standards.

Suppliers

Company
Product
Description
Supplier Links
Sheung Wan, Hong Kong
JFET JFETs

JFET JFETs

Buy Now Datasheet

Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Transistors
Product Number 2N2608
Product Name JFET
Transistor Type JFET
Unlock Full Specs
to access all available technical data

Similar Products

Bipolar Transistors - 1219448 - RS Components, Ltd.
Specs
Transistor Type BJT
Polarity NPN
Package Type SOT23; Sot-23
View Details
Hard To Find - 2MBI800U4G-120 - 1123628-2MBI800U4G-120 - Win Source Electronics
Specs
Transistor Type IGBT
Package Type SOT3
View Details
2 suppliers
NPN general-purpose transistor - 2PC4081Q,115 - Nexperia B.V.
Specs
Transistor Type BJT
Package Type SOT323; SOT323 SOT323
View Details
6 suppliers