Microsemi Corp. TRANSISTORS - Transistors (BJT) - Single - 2N2605 2N2605

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1123663-2N2605 Packaging: Bulk Mounting Style: Through Hole Transistor Type: PNP Categories: Discrete Semiconductor Products Supplier Device Package: TO-46-3 Temperature Range - Operating: -65°C ~ 200°C Manufacturer Homepage: www.semicoa.com/ Manufacturer Package: TO-206AB, TO-46-3 Metal Can Current - Collector (Ic) (Maximum): 30mA Voltage - Collector Emitter Breakdown (Maximum): 60V Current - Collector Cutoff (Maximum): 10nA Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 300mV at 500μA, 10mA DC Current Gain (hFE) (Minimum) at Ic, Vce: 100 at 10mA, 5V Maximum Power: 400mW
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1123663-2N2605 Packaging: Bulk Mounting Style: Through Hole Transistor Type: PNP Categories: Discrete Semiconductor Products Supplier Device Package: TO-46-3 Temperature Range - Operating: -65°C ~ 200°C Manufacturer Homepage: www.semicoa.com/ Manufacturer Package: TO-206AB, TO-46-3 Metal Can Current - Collector (Ic) (Maximum): 30mA Voltage - Collector Emitter Breakdown (Maximum): 60V Current - Collector Cutoff (Maximum): 10nA Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 300mV at 500μA, 10mA DC Current Gain (hFE) (Minimum) at Ic, Vce: 100 at 10mA, 5V Maximum Power: 400mW
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Suppliers

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Supplier Links
TRANSISTORS - Transistors (BJT) - Single - 2N2605 - 1123663-2N2605 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2N2605
1123663-2N2605
TRANSISTORS - Transistors (BJT) - Single - 2N2605 1123663-2N2605
Manufacturer: Microsemi Corporation Win Source Part Number: 1123663-2N2605 Packaging: Bulk Mounting Style: Through Hole Transistor Type: PNP Categories: Discrete Semiconductor Products Supplier Device Package: TO-46-3 Temperature Range - Operating: -65°C ~ 200°C Manufacturer Homepage: www.semicoa.com/ Manufacturer Package: TO-206AB, TO-46-3 Metal Can Current - Collector (Ic) (Maximum): 30mA Voltage - Collector Emitter Breakdown (Maximum): 60V Current - Collector Cutoff (Maximum): 10nA Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 300mV at 500μA, 10mA DC Current Gain (hFE) (Minimum) at Ic, Vce: 100 at 10mA, 5V Maximum Power: 400mW

Manufacturer: Microsemi Corporation
Win Source Part Number: 1123663-2N2605
Packaging: Bulk
Mounting Style: Through Hole
Transistor Type: PNP
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-46-3
Temperature Range - Operating: -65°C ~ 200°C
Manufacturer Homepage: www.semicoa.com/
Manufacturer Package: TO-206AB, TO-46-3 Metal Can
Current - Collector (Ic) (Maximum): 30mA
Voltage - Collector Emitter Breakdown (Maximum): 60V
Current - Collector Cutoff (Maximum): 10nA
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 300mV at 500μA, 10mA
DC Current Gain (hFE) (Minimum) at Ic, Vce: 100 at 10mA, 5V
Maximum Power: 400mW

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2N2605
Bipolar Transistors - BJT 2N2605
Bipolar Transistors - BJT BJTs

Bipolar Transistors - BJT BJTs

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Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED
Product Category Transistors Bipolar RF Transistors
Product Number 1123663-2N2605 2N2605
Product Name TRANSISTORS - Transistors (BJT) - Single - 2N2605 Bipolar Transistors - BJT
Polarity PNP
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