The 2N2605/TR is a PNP silicon low-power transistor in a TO-46 package, with a collector-base voltage rating of 70 Vdc, collector-emitter voltage of 60 Vdc, and collector current of 30 mAdc. It has a maximum total power dissipation of 400 mW at +25°C ambient temperature and a thermal resistance of 275°C/mW. The device operates and stores from -65°C to +200°C. Current gain (hFE) ranges from 100 to 450 at collector current of 10 mA and collector-emitter voltage of 5.0 Vdc. The collector-emitter saturation voltage is 0.3 Vdc at 10 mA collector current and 500 μA base current. The case is electrically connected to the collector terminal.
Bipolar Transistors - BJT BJTs
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 2N2605/TR |
| Product Name | Bipolar Transistors - BJT |
