Microsemi Corp. Bipolar Transistors - BJT 2N2484UB/TR

The 2N2484UB/TR is an NPN silicon low-power transistor qualified to MIL-PRF-19500/376, housed in a TO-18 (TO-206AA) package. It has a collector-emitter voltage rating of 60 Vdc, collector current of 50 mAdc, and total power dissipation of 360 mW at 25°C. The thermal resistance from ambient to case is 350°C/W. Electrical characteristics include a DC current gain (hFE) ranging from 225 to 800 at 10 mA collector current and 5 V collector-emitter voltage, with a collector-emitter saturation voltage of 0.3 V at 1 mA collector and 100 μA base current. The device supports operating and storage junction temperatures from -65°C to +200°C.