Microsemi Corp. Bipolar Transistors - BJT 2N2484UA/TR

The 2N2484UA is an NPN silicon low-power transistor qualified per MIL-PRF-19500/376, housed in a TO-18 (TO-206AA) package. It has a collector-emitter voltage rating of 60 Vdc, a collector current limit of 50 mAdc, and a total power dissipation of 360 mW at +25°C. Its thermal resistance from ambient to case is 275 °C/W. The transistor exhibits a forward current transfer ratio (hFE) ranging from 225 to 800 at a collector current of 10 mA and collector-emitter voltage of 5.0 Vdc. The collector-emitter saturation voltage is 0.3 Vdc at a collector current of 1.0 mA and base current of 100 μA. Operating and storage junction temperatures range from -65°C to +200°C.