Microsemi Corp. Bipolar Transistors - BJT 2N2432UB

The 2N2432UB is an NPN silicon low-power transistor in a TO-18 package, qualified to MIL-PRF-19500/313 with JAN, JANTX, and JANTXV reliability levels. It has a collector-emitter voltage rating of 30 Vdc, a collector current rating of 100 mAdc, and a total power dissipation of 300 mW at 25°C, derating at 2.0 mW/°C above that temperature. Operating and storage junction temperatures range from -65°C to +175°C and -65°C to +200°C, respectively. The transistor has a minimum current gain of 30 at 10 mA collector current and 80 to 400 at 1.0 mA, with an output capacitance of 12 pF at 100 kHz to 1.0 MHz. Thermal resistance from junction to case is 0.25 °C/mW.