Microsemi Corp. Bipolar Transistors - BJT 2N2432AUB

NPN silicon low-power transistor in a TO-18 package, qualified to MIL-PRF-19500/313 for JAN, JANTX, and JANTXV levels, with a collector-emitter voltage rating of 45 Vdc, collector-base voltage of 45 Vdc, and emitter-collector voltage of 18 Vdc. It supports a maximum collector current of 100 mAdc and total power dissipation of 600 mW at +25°C. Operating and storage junction temperature ranges from -65°C to +175°C. Thermal resistance junction-to-case is 0.25°C/mW. Forward current transfer ratio ranges from 80 to 400 at 1.0 mA collector current. Output and input capacitance are both 12 pF at 100 kHz to 1.0 MHz. It meets RoHS standards and is designed for reliable performance in high-reliability applications.